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November 2013
FQPF5N90
N-Channel QFET ? MOSFET
900 V, 3 A, 2.3 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
Features
? 3 A, 900 V, R DS(on) = 2.3 ? (Max.) @ V GS = 10 V,
I D = 1.5 A
? Low Gate Charge (Typ. 31 nC)
? Low Crss (Typ. 13 pF)
? 100% Avalanche Tested
? LoHS Compliant
ballasts.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF5N90
900
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
3.0
1.9
A
A
I DM
V GSS
Drain Current
Gate-Source Voltage
- Pulsed
(Note 1)
12
± 30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
660
3.0
5.1
4.0
51
0.41
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF5N90
2.45
62.5
Unit
°C / W
?2000 Fairchild Semiconductor Corporation
FQPF5N90 Rev. C1
1
www.fairchildsemi.com
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